Search results for "E′ center"
showing 2 items of 2 documents
Effects induced by 4.7 eV UV laser irradiation on pure silica core multimode optical fibers investigated by in situ optical absorption measurements
2011
We investigated by in situ optical absorption measurements the effects induced by 4.7 eV UV laser irradiation on pure silica core optical fibers. Laser irradiation with 100 MWcm−2 laser intensity generates in the fiber E′ centers which partially decay after irradiation due to their reaction with diffusing H2. An absorption band peaked at 5.3 eV is observed to grow in the post-irradiation stage with a kinetics anti-correlated to the decay of the 5.8 eV band of the E′ centers. The defect absorbing at 5.3 eV is proposed to be formed by trapping on pre-existing precursors of hydrogen atoms made available by breaking of H2 on E′.We also show by repeated irradiation experiments that the 5.3 eV-ab…
Investigation on the microscopic structure of E' center in amorphous silicon dioxide by electron paramagnetic resonance spectroscopy
2006
The E′δ center is one of the most important paramagnetic point defects in amorphous silicon dioxide ( a-SiO 2) primarily for applications in the field of electronics. In fact, its appearance in the gate oxide of metal-oxide-semiconductor (MOS) structures seriously affects the proper work of many devices and, often, causes their definitive failure. In spite of its relevance, until now a definitive microscopic model of this point defect has not been established. In the present work we review our experimental investigation by electron paramagnetic resonance (EPR) on the E′δ center induced in γ-ray irradiated a-SiO 2. This study has driven us to the determination of the intensity ratio between…